Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects
Author:
Affiliation:
1. Graphene Research Centre
2. National University of Singapore
3. Singapore 117546
4. Department of Physics
Abstract
We review the state-of-the-art electronic properties of atomically thin TMD FETs with a focus on surface and interface effects.
Funder
National Research Foundation-Prime Minister's office, Republic of Singapore
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2015/CS/C5CS00275C
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