Unveiling the atomic defects and electronic structure of Cu2.2Zn0.8SnSe4−xTex (x = 0 to 0.04) by X-ray absorption fine structure spectroscopy-Reference-Cited by-同舟云学术

Unveiling the atomic defects and electronic structure of Cu2.2Zn0.8SnSe4−xTex (x = 0 to 0.04) by X-ray absorption fine structure spectroscopy

Published:2020 Issue:17 Volume:22 Page:9362-9367
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Huang Weifeng¹²³⁴,Zhu Yingcai⁵⁶⁷⁸⁴,Liu Yong⁹¹⁰¹¹,Liu Lijuan¹²¹³¹⁴⁴,Yang Changchun¹²³⁴,Xu Wei⁵⁶⁷⁸⁴^ORCID

Affiliation:

1. School of Electronic Engineering

2. Jiujiang University

3. Jiujiang

4. China

5. Beijing Synchrotron Radiation Facility

6. Institute of High Energy Physics

7. Chinese Academy of Sciences

8. Beijing

9. Foshan (Southern China) Institute for New Materials

10. Foshan

11. P. R. China

12. School of Physics and Microelectronics

13. Zhengzhou University

14. Zhengzhou

Abstract

Cu_Zn anti-site defects and oxygen interstitial defects in a quaternary compound, Cu_2.2Zn_0.8SnSe₄, are revealed by X-ray absorption fine structure spectroscopy.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2020/CP/D0CP01153C

Reference39 articles.

1. Photovoltaic materials: Present efficiencies and future challenges

2. Variable chemical decoration of extended defects in Cu-poor Cu2ZnSnSe4 thin films

3. Progress and Perspectives of Thin Film Kesterite Photovoltaic Technology: A Critical Review

4. Classification of Lattice Defects in the Kesterite Cu2ZnSnS4and Cu2ZnSnSe4Earth-Abundant Solar Cell Absorbers

5. A wide-band-gap p-type thermoelectric material based on quaternary chalcogenides of Cu2ZnSnQ4 (Q=S,Se)

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