Electron–phonon relaxation at the Au/WSe<sub>2</sub> interface is significantly accelerated by a Ti adhesion layer: time-domain <i>ab initio</i> analysis-Reference-Cited by-同舟云学术

Electron–phonon relaxation at the Au/WSe₂ interface is significantly accelerated by a Ti adhesion layer: time-domain ab initio analysis

Published:2022 Issue:29 Volume:14 Page:10514-10523
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Lu Teng-Fei¹^ORCID,Gumber Shriya²^ORCID,Tokina Marina V.²^ORCID,Tomko John A.³^ORCID,Hopkins Patrick E.³⁴⁵^ORCID,Prezhdo Oleg V.²⁶^ORCID

Affiliation:

1. School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, Liaoning Province, China

2. Department of Chemistry, University of Southern California, Los Angeles, CA 90089, USA

3. Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA 22904, USA

4. Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22904, USA

5. Department of Physics, University of Virginia, Charlottesville, VA 22904, USA

6. Department of Physics and Astronomy, University of Southern California, Los Angeles, CA 90089, USA

Abstract

On introduction of a thin Ti adhesion layer at the Au/WSe2 interface, the electron–phonon coupling strengthens which results in accelerated excited charge carrier relaxation.

Funder

Semiconductor Research Corporation

U.S. Department of Defense

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NR/D2NR00728B

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