Direct characterization of graphene doping state by in situ photoemission spectroscopy with Ar gas cluster ion beam sputtering-Reference-Cited by-同舟云学术

Direct characterization of graphene doping state by in situ photoemission spectroscopy with Ar gas cluster ion beam sputtering

Published:2018 Issue:1 Volume:20 Page:615-622
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Yun Dong-Jin¹²³,Kim Seyun⁴²³,Jung Changhoon¹²³,Lee Chang-Seok¹²³,Sohn Hiesang⁵⁶³,Won Jung Yeon¹²³,Kim Yong Su¹²³,Chung JaeGwan¹²³,Heo Sung¹²³,Kim Seong Heon¹²³,Seol Minsu⁷²³,Shin Weon Ho⁸⁹³^ORCID

Affiliation:

1. Analytical Science Laboratory, Samsung Advanced Institute of Technology

2. Suwon

3. Republic of Korea

4. Materials Research Center Samsung Advanced Institute of Technology

5. Department of Chemical Engineering, Kwangwoon University

6. Seoul 01897

7. Graphene Center Samsung Advanced Institute of Technology

8. Energy Materials Center, Energy & Environment Division, Korea Institute of Ceramic Engineering & Technology

9. Jinju-si

Abstract

We propose a novel, direct diagnosis method for graphene doping states at organic semiconductor/electrode interfaces by an in situ photoemission spectroscopy method.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CP/C7CP06450K

Reference30 articles.

1. Metal–semiconductor contact in organic thin film transistors

2. Effect of self assembled monolayer on the energy structure of pentacene and Ru/Ti semiconductor–metal contact measured with in situ ultraviolet photoemission spectroscopy

3. Molecular Template Growth and Its Applications in Organic Electronics and Optoelectronics