Highly hydrophobic metal–organic framework for self-protecting gate dielectrics-Reference-Cited by-同舟云学术

Highly hydrophobic metal–organic framework for self-protecting gate dielectrics

Published:2020 Issue:24 Volume:8 Page:11958-11965
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Inamdar Arif I.¹²³⁴⁵^ORCID,Pathak Abhishek¹²³⁴,Usman Muhammad¹²³⁴^ORCID,Chiou Kuan-Ru⁶⁷⁸⁴,Tsai Pei-Hsien¹²³⁴,Mendiratta Shruti¹²³⁴^ORCID,Kamal Saqib¹²³⁴,Liu Yen-Hsiang⁹¹⁰¹¹⁴,Chen Jenq-Wei⁶⁷⁸⁴^ORCID,Chiang Ming-Hsi¹²³⁴,Lu Kuang-Lieh¹²³⁴⁹

Affiliation:

1. Institute of Chemistry

2. Academia Sinica

3. Taipei 115

4. Taiwan

5. Department of Applied Chemistry

6. Department of Physics

7. National Taiwan University

8. Taipei 106

9. Department of Chemistry

10. Fu Jen Catholic University

11. New Taipei City 242

Abstract

A high-κ copper-based metal–organic framework with unusual dielectric behaviour and outstanding water resistant properties was successfully designed for self-protecting microelectronic devices as gate dielectrics.

Funder

Academia Sinica

Ministry of Science and Technology, Taiwan

National Chiao Tung University

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TA/D0TA00605J

Reference56 articles.

1. High-k Gate Dielectrics for Emerging Flexible and Stretchable Electronics