Semiconductors with a chiral crystal structure in group IVB transition metal pernitrides-Reference-Cited by-同舟云学术

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Semiconductors with a chiral crystal structure in group IVB transition metal pernitrides

Published:2022 Issue:36 Volume:24 Page:22046-22056
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Xie Xing¹,Wen Minru¹^ORCID,Dong Huafeng¹,Long Hui¹,Zhang Xin¹,Wu Fugen²,Mu Zhongfei³^ORCID

Affiliation:

1. School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China

2. School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China

3. Experimental Teaching Department, Guangdong University of Technology, Guangzhou, 510006, China

Abstract

The novel structures of P3121 and P3221 in group IVB transition metal pernitrides exhibit the interesting semiconductor phase.

Funder

National Natural Science Foundation of China

Guangzhou Municipal Science and Technology Project

Natural Science Foundation of Guangdong Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CP/D2CP02627A

Reference59 articles.

1. Comparison of TiN-coated tools using CVD and PVD processes during continuous cutting of Ni-based superalloys

2. Cutting force, tool wear and surface roughness in high-speed milling of high-strength steel with coated tools

3. Thin films of hard cubic Zr3N4 stabilized by stress

4. Sputter-deposited nitrides for oxidation protection in a steam environment at high temperatures

5. Hafnium nitride for hot carrier solar cells

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1. Ambient-Condition Recoverable Polymeric N₁₀ Discovered from the Predicted Zr-N Compounds;Inorganic Chemistry;2024-06-25

2. Structural, mechanical and electronic properties of hafnium borides: a first principle study;Journal of Materials Science;2023-01

3. Pressure-induced novel ZrN₄ semiconductor materials with high dielectric constants: a first-principles study;Physical Chemistry Chemical Physics;2023

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