Effects of electric field and light on resistivity switching of Eu0.7Sr0.3MnO3 thin films

Author:

Zheng Ming123ORCID,Zhang Yixiao1,Wang Shengnan4,Yang Jian1ORCID,Guan Pengfei1,Zhang Baojing1,Fan Heliang1,Yan Shiguang2,Ni Hao4,Yang Chang5

Affiliation:

1. School of Materials Science and Physics, China University of Mining and Technology, Xuzhou 221116, China

2. Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China

3. Key Laboratory of Aerospace Information Materials and Physics (NUAA), MIIT, Nanjing 211106, China

4. College of Science, China University of Petroleum (East China), Qingdao 266580, China

5. Key Laboratory of Polar Materials and Devices (MOE), Shanghai Center of Brain-inspired Intelligent Materials and Devices, and Department of Electronics, East China Normal University, Shanghai, 200241, China

Abstract

Based on the excellent piezoelectric properties of 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 (PMN–PT) single crystals, a hole-doped manganite film/PMN–PT heterostructure has been constructed to achieve electric-field and light co-control of physical properties.

Funder

China University of Mining and Technology

National Natural Science Foundation of China

Chinese Academy of Sciences

Fundamental Research Funds for the Central Universities

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

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