Maximizing spin Hall magnetoresistance in heavy metal/crystalline metallic ferromagnet multilayers with opposite spin Hall angles-Reference-Cited by-同舟云学术

Maximizing spin Hall magnetoresistance in heavy metal/crystalline metallic ferromagnet multilayers with opposite spin Hall angles

Published:2023 Issue:2 Volume:15 Page:820-827
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Hui Yajuan¹²³^ORCID,Jiang Hui¹²³,Xie Fei¹²³,Lin Weinan⁴,Dong Chao⁵,Dong Kaifeng¹²³^ORCID,He Qiang⁵⁶,Miao Xiangshui⁵⁶^ORCID

Affiliation:

1. School of Automation, China University of Geosciences, Wuhan, 430074, China

2. Hubei key Laboratory of Advanced Control and Intelligent Automation for Complex Systems, Wuhan, 430074, China

3. Engineering Research Center of Intelligent Technology for Geo-Exploration, Ministry of Education, Wuhan 430074, China

4. Department of Physics, Xiamen University, Xiamen 361005, China

5. Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China

6. Wuhan National Lab for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China

Abstract

With the cooperative interaction of choosing the proper Ta's thickness and annealing of NiFe, a maximum SMR is obtained in Ta/Pt/NiFe trilayers. The ISOC and its reciprocal effects dominates the bulk effects.

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

China University of Geosciences, Wuhan

Institute of Computing Technology, Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D2NR02306G

Reference41 articles.

1. Magnetoresistive Sensor Development Roadmap (Non-Recording Applications)

2. Charge–spin interconversion and its applications in magnetic sensing

3. Spin currents and spin–orbit torques in ferromagnetic trilayers

4. A nonlocal spin Hall magnetoresistance in a platinum layer deposited on a magnon junction

5. Spin Hall Magnetoresistance Induced by a Nonequilibrium Proximity Effect

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