van der Waals trilayers and superlattices: modification of electronic structures of MoS2 by intercalation-Reference-Cited by-同舟云学术

van der Waals trilayers and superlattices: modification of electronic structures of MoS2 by intercalation

Published:2014 Issue:9 Volume:6 Page:4566-4571
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Lu Ning¹²³⁴⁵,Guo Hongyan⁶⁷⁸⁹⁵,Wang Lu⁶⁷⁸⁹²,Wu Xiaojun⁶⁷⁸⁹¹⁰,Zeng Xiao Cheng⁵¹¹¹²¹⁰⁸

Affiliation:

1. Center for Nano Science and Technology

2. Department of Physics

3. Anhui Normal University

4. Wuhu, China

5. Department of Chemistry and Department Mechanics and Materials Engineering

6. CAS Key Lab of Materials for Energy Conversion

7. Department of Materials Science and Engineering

8. University of Science and Technology of China

9. Hefei, China

10. Hefei National Laboratory for Physical Sciences at the Microscale

11. University of Nebraska-Lincoln

12. Lincoln, USA

Abstract

We perform a comprehensive first-principles study of the electronic properties of van der Waals (vdW) trilayers via intercalating a two-dimensional (2D) monolayer (ML = BN, MoSe₂, WS₂, or WSe₂) between a MoS₂ bilayer to form various MoS₂/ML/MoS₂ sandwich trilayers.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2014/NR/C4NR00783B

Reference48 articles.

1. Single-layer MoS2 transistors

2. Integrated Circuits Based on Bilayer MoS2 Transistors

3. Integrated Circuits and Logic Operations Based on Single-Layer MoS2

4. How Good Can Monolayer MoS2 Transistors Be?

5. Atomically ThinMoS2: A New Direct-Gap Semiconductor

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