Understanding the influence of Bi/Sb substitution on carrier concentration in Mg<sub>3</sub>Sb<sub>2</sub>-based materials: decreasing bandgap enhances the degree of impurity ionization-Reference-Cited by-同舟云学术

Understanding the influence of Bi/Sb substitution on carrier concentration in Mg₃Sb₂-based materials: decreasing bandgap enhances the degree of impurity ionization

Published:2022 Issue:45 Volume:24 Page:27812-27818
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Li Juan¹^ORCID,Jia Fei²,Han Kai¹,Sun Bing¹,Cao Lianzhen¹,Li Yingde¹,Zhang Shuai¹^ORCID

Affiliation:

1. School of Physics and Electronic Information, Weifang University, Weifang 261061, China

2. Center for Advanced Materials Research, Advanced Institute of Natural Sciences, Beijing Normal University, Zhuhai 519087, China

Abstract

The increased carrier concentration by Bi doping originates from the enhanced degree of donor impurity ionization in n-type Mg3Sb2-based materials.

Funder

Natural Science Foundation of Shandong Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CP/D2CP04314A

Reference49 articles.

1. Cooling, Heating, Generating Power, and Recovering Waste Heat with Thermoelectric Systems

2. Carrier grain boundary scattering in thermoelectric materials

3. Thermoelectric cooling materials

4. Defect engineering in thermoelectric materials: what have we learned?

5. Defect Engineering for Realizing High Thermoelectric Performance in n-Type Mg3Sb2-Based Materials

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