Electronic and magnetic properties of SnSe monolayers doped by Ga, In, As, and Sb: a first-principles study-Reference-Cited by-同舟云学术

Electronic and magnetic properties of SnSe monolayers doped by Ga, In, As, and Sb: a first-principles study

Author:

Wang Qingxia¹²³⁴⁵,Yu Weiyang¹²³⁴⁵,Fu Xiaonan⁶⁷⁸⁵,Qiao Chong¹²³⁴⁵,Xia Congxin⁹¹⁰¹¹⁵,Jia Yu¹²³⁴⁵

Affiliation:

1. International Laboratory for Quantum Functional Materials of Henan

2. and School of Physics and Engineering

3. Zhengzhou University

4. Zhengzhou

5. China

6. Department of Physics and School of Science

7. Henan University of Technology

8. Zhengzhou 450001

9. Department of Physics

10. Henan Normal University

11. Xinxiang

Abstract

A SnSe monolayer with an orthorhombic Pnma GeS structure is an important two-dimensional (2D) indirect band gap material at room temperature.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

Reference44 articles.

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