Fabrication of highly ordered sub-20 nm silicon nanopillars by block copolymer lithography combined with resist design-Reference-Cited by-同舟云学术

Fabrication of highly ordered sub-20 nm silicon nanopillars by block copolymer lithography combined with resist design

Published:2013 Issue:22 Volume:1 Page:3544
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Salaun Mathieu,Zelsmann Marc,Archambault Sophie,Borah Dipu,Kehagias Nikolaos,Simao Claudia,Lorret Olivier,Shaw Matthew T.,Sotomayor Torres Clivia M.,Morris Mickael A.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2013/TC/C3TC30300D

Reference34 articles.

1. Macroscopic 10-Terabit–per–Square-Inch Arrays from Block Copolymers with Lateral Order

2. Sub-Nanometer Level Size Tuning of a Monodisperse Nanoparticle Array Via Block Copolymer Lithography

3. Plasma etch technologies for the development of ultra-small feature size transistor devices

4. Robust Block Copolymer Mask for Nanopatterning Polymer Films

5. Directed Assembly of Block Copolymer Blends into Nonregular Device-Oriented Structures

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