Compound defects and thermoelectric properties in ternary CuAgSe-based materials-Reference-Cited by-同舟云学术

Compound defects and thermoelectric properties in ternary CuAgSe-based materials

Author:

Wang Xiaobei¹²³⁴⁵,Qiu Pengfei¹²³⁴⁵,Zhang Tiansong⁶²³⁴⁵,Ren Dudi¹²³⁴⁵,Wu Lihua¹²³⁴⁵,Shi Xun¹²³⁴⁵,Yang Jihui⁷⁸⁹¹⁰,Chen Lidong¹²³⁴⁵

Affiliation:

1. State Key Laboratory of High Performance Ceramics and Superfine Microstructure

2. Shanghai Institute of Ceramics

3. Chinese Academy of Sciences

4. Shanghai 200050

5. China

6. CAS Key Laboratory of Materials for Energy Conversion

7. Materials Science and Engineering Department

8. University of Washington

9. Seattle

10. USA

Abstract

Carrier concentrations dominated the TE properties in CuAgSe-based materials, which is a promising thermoelectric material near room temperature.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

Reference44 articles.

4. A. F. Ioffe , Semiconductor of thermoelements and thermoelectric cooling, Infosearch Limited, London, 1957

5. G. A. Slack , CRC Handbook of Thermoelectrics, CRC Press, New York, 1995

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