Bifacial passivation of n-silicon metal–insulator–semiconductor photoelectrodes for efficient oxygen and hydrogen evolution reactions-Reference-Cited by-同舟云学术

Bifacial passivation of n-silicon metal–insulator–semiconductor photoelectrodes for efficient oxygen and hydrogen evolution reactions

Published:2020 Issue:1 Volume:13 Page:221-228
ISSN:1754-5692
Container-title:Energy & Environmental Science
language:en
Short-container-title:Energy Environ. Sci.

Author:

Liu Bin¹²³⁴⁵,Feng Shijia¹²³⁴⁵,Yang Lifei⁶⁷⁵,Li Chengcheng¹²³⁴⁵,Luo Zhibin¹²³⁴⁵,Wang Tuo¹²³⁴⁵^ORCID,Gong Jinlong¹²³⁴⁵^ORCID

Affiliation:

1. Key Laboratory for Green Chemical Technology of Ministry of Education

2. School of Chemical Engineering and Technology

3. Tianjin University

4. Tianjin 300072

5. China

6. GCL System Integration Technology Co., Ltd

7. Suzhou 215000

Abstract

This paper describes a bifacial passivation strategy for the metal/Si interface of metal–insulator–semiconductor (MIS) photoelectrodes, achieving record high activities for water oxidation and reduction for Si-based MIS electrodes.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Tianjin City

National Basic Research Program of China

Project 211

Publisher

Royal Society of Chemistry (RSC)

Subject

Pollution,Nuclear Energy and Engineering,Renewable Energy, Sustainability and the Environment,Environmental Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/EE/C9EE02766A

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