Few-layer bismuthene for ultrashort pulse generation in a dissipative system based on an evanescent field-Reference-Cited by-同舟云学术

Few-layer bismuthene for ultrashort pulse generation in a dissipative system based on an evanescent field

Author:

Chai Tong¹²³⁴⁵,Li Xiaohui¹²³⁴⁵^ORCID,Feng Tianci¹²³⁴⁵,Guo Penglai¹²³⁴⁵,Song Yufeng¹²³⁴⁵,Chen Yunxiang¹²³⁴⁵,Zhang Han¹²³⁴⁵^ORCID

Affiliation:

1. Shenzhen Key Laboratory of Two-Dimensional Materials and Devices/Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics

2. Collaborative Innovation Center for Optoelectronic Science and Technology

3. Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province

4. Shenzhen

5. PR China

Abstract

A dissipative soliton Yb-doped mode-locked fiber laser at 1 μm regime with bismuthene saturable absorber via an evanescent field interaction.

Funder

National Natural Science Foundation of China

Chinese Academy of Sciences

Beijing University of Posts and Telecommunications

Shaanxi Normal University

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

Reference35 articles.

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