N-type field-effect transistors based on layered crystalline donor–acceptor semiconductors with dialkylated benzothienobenzothiophenes as electron donors-Reference-Cited by-同舟云学术

N-type field-effect transistors based on layered crystalline donor–acceptor semiconductors with dialkylated benzothienobenzothiophenes as electron donors

Published:2015 Issue:9 Volume:3 Page:1976-1981
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Tsutsumi Jun'ya¹²³,Matsuoka Satoshi¹²³,Inoue Satoru¹²³,Minemawari Hiromi¹²³,Yamada Toshikazu¹²³,Hasegawa Tatsuo¹²³⁴⁵

Affiliation:

1. National Institute of Advanced Industrial Science and Technology (AIST)

2. Tsukuba 305-8562

3. Japan

4. Department of Applied Physics

5. The University of Tokyo

Abstract

We report structural, electronic, and field-effect transistor characteristics of layered crystalline donor–acceptor semiconductors with dialkylated benzothienobenzothiophenes.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C4TC02481H

Reference24 articles.

1. Charge Transport Physics of Conjugated Polymer Field-Effect Transistors

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5. Highly Soluble [1]Benzothieno[3,2-b]benzothiophene (BTBT) Derivatives for High-Performance, Solution-Processed Organic Field-Effect Transistors

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