The synthesis of competing phase GeSe and GeSe2 2D layered materials-Reference-Cited by-同舟云学术

The synthesis of competing phase GeSe and GeSe2 2D layered materials

Published:2020 Issue:63 Volume:10 Page:38227-38232
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Yumigeta Kentaro¹²³⁴⁵,Brayfield Cassondra¹²³⁴⁵^ORCID,Cai Hui¹²³⁴⁵,Hajra Debarati¹²³⁴⁵,Blei Mark¹²³⁴⁵,Yang Sijie¹²³⁴⁵,Shen Yuxia¹²³⁴⁵,Tongay S.¹²³⁴⁵^ORCID

Affiliation:

1. Materials Science and Engineering

2. School for Engineering of Matter, Transport and Energy

3. Arizona State University

4. Tempe

5. USA

Abstract

We report the synthesis of layered anisotropic semiconductor GeSe and GeSe₂ nanomaterials through low temperature and atmospheric pressure chemical vapor deposition using halide based precursors. The crystal phase is controlled by simply changing selenium vapor pressure.

Funder

Division of Electrical, Communications and Cyber Systems

Division of Materials Research

Army Research Office

Division of Civil, Mechanical and Manufacturing Innovation

U.S. Department of Energy

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/RA/D0RA07539F