A layered (n-C4H9NH3)2CsAgBiBr7 perovskite for bipolar resistive switching memory with a high ON/OFF ratio
Author:
Affiliation:
1. School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Korea
Abstract
Funder
National Research Foundation of Korea
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2021/NR/D1NR03245C
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