Two-dimensional electron gas at the LaAlO3/SrTiO3 inteface with a potential barrier-Reference-Cited by-同舟云学术

Two-dimensional electron gas at the LaAlO3/SrTiO3 inteface with a potential barrier

Published:2016 Issue:3 Volume:18 Page:2104-2111
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Stephanovich V. A.¹²³⁴,Dugaev V. K.⁵⁶⁷⁴⁸,Barnaś J.⁹¹⁰¹¹⁴¹²

Affiliation:

1. Institute of Physics

2. Opole University

3. 45-052 Opole

4. Poland

5. Department of Physics and Medical Engineering

6. Rzeszów University of Technology

7. 35-959 Rzeszów

8. Departamento de Física and CeFEMA

9. Faculty of Physics

10. Adam Mickiewicz University

11. 61-614 Poznań

12. Institute of Molecular Physics

Abstract

We present a tight binding description of electronic properties of the interface between LaAlO₃ (LAO) and SrTiO₃ (STO). We show that depending on the potential strength, charge carriers (electrons or holes) may form an energy band which is localized at the interface and is within the band gaps of the constituent materials (LAO and STO).

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2016/CP/C5CP06627A

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1. Emergent phenomena at oxide interfaces

2. Ultrathin oxide films and interfaces for electronics and spintronics

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