Polarity-controllable MoS2 transistor for adjustable complementary logic inverter applications-Reference-Cited by-同舟云学术

Polarity-controllable MoS2 transistor for adjustable complementary logic inverter applications

Published:2020 Issue:1 Volume:5 Page:163-170
ISSN:2055-6756
Container-title:Nanoscale Horizons
language:en
Short-container-title:Nanoscale Horiz.

Author:

Lin Che-Yu¹²³⁴⁵,Simbulan Kristan Bryan⁶⁷⁸⁴^ORCID,Hong Chuan-Jie⁹¹⁰¹¹⁴,Li Kai-Shin¹²¹³¹⁴⁴,Zhong Yuan-Liang⁹¹⁰¹¹⁴,Su Yan-Kuin¹²³⁴⁵,Lan Yann-Wen⁶⁷⁸⁴^ORCID

Affiliation:

1. Institute of Microelectronics

2. National Cheng Kung University

3. Tainan 701

4. Taiwan

5. Green Energy Technology Research Center

6. Department of Physics

7. National Taiwan Normal University

8. Taipei 11677

9. Department of Physics and Center for Nanotechnology

10. Chung Yuan Christian University

11. Chungli

12. National Nano Device Laboratories

13. National Applied Research Laboratories

14. Hsinchu 30078

Abstract

A MoS₂-based field effect transistor has been exhibited with the selective operation of either p- or n-type characteristics in the same device. Compared to existing individual devices, our device could save almost twice the process time and price.

Funder

Ministry of Science and Technology, Taiwan

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NH/C9NH00275H

Reference43 articles.

1. Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

2. Two-dimensional atomic crystals

3. Electronics based on two-dimensional materials