Highly conductive and stable Co9S8 thin films by atomic layer deposition: from process development and film characterization to selective and epitaxial growth-Reference-Cited by-同舟云学术

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Highly conductive and stable Co9S8 thin films by atomic layer deposition: from process development and film characterization to selective and epitaxial growth

Published:2021 Issue:38 Volume:50 Page:13264-13275
ISSN:1477-9226
Container-title:Dalton Transactions
language:en
Short-container-title:Dalton Trans.

Author:

Mattinen Miika¹^ORCID,Hatanpää Timo¹^ORCID,Mizohata Kenichiro²^ORCID,Räisänen Jyrki²,Leskelä Markku¹^ORCID,Ritala Mikko¹^ORCID

Affiliation:

1. Department of Chemistry, University of Helsinki, P.O. Box 55, FI-00014, Finland

2. Department of Physics, University of Helsinki, P.O. Box 43, FI-00014, Finland

Abstract

A new ALD process using easily synthesized CoCl2(TMEDA) and H2S enables deposition of ultrathin, highly conductive and thermally stable Co9S8 films selectively on SiO2 without growth on Si–H.

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/DT/D1DT02315B

Reference53 articles.

1. Transition metal sulfides

2. Thermodynamics and phase relationships of transition metal-sulfur systems: I. The cobalt-sulfur system

3. Range of homogeneity and defect energetics in Co1−x S

4. One-Step Fabrication of Monolithic Electrodes Comprising Co9S8Particles Supported on Cobalt Foam for Efficient and Durable Oxygen Evolution Reaction

5. Phase and composition controlled synthesis of cobalt sulfide hollow nanospheres for electrocatalytic water splitting

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