Intriguing electronic insensitivity and high carrier mobility in monolayer hexagonal YN-Reference-Cited by-同舟云学术

Intriguing electronic insensitivity and high carrier mobility in monolayer hexagonal YN

Published:2018 Issue:18 Volume:6 Page:4943-4951
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zheng Kai¹²³⁴⁵^ORCID,Yang Xibin⁶⁷⁸⁵,Cui Heping¹²³⁴⁵,Yang Qun¹²³⁴⁵,Ye Huaiyu¹²³⁴⁵,Xiong Daxi⁶⁷⁸⁵,Ingebrandt Sven⁹¹⁰¹¹¹²,Chen Xianping¹²³⁴⁵

Affiliation:

1. Key Laboratory of Optoelectronic Technology & Systems

2. Education Ministry of China, Chongqing University and College of Optoelectronic Engineering

3. Chongqing University

4. Chongqing 400044

5. China

6. Suzhou Institute of Biomedical Engineering

7. Chinese Academy of Sciences

8. Suzhou 215163

9. Department of Informatics and Microsystem Technology

10. University of Applied Sciences

11. Kaiserslautern Zweibruecken 66482

12. Germany

Abstract

A novel two-dimensional h-YN monolayer with high carrier mobility, insensitive electronic responses to strain and light electron effective masses in its few layer structures was predicted to be a promising candidate for future nanoscale electronic devices in high-strain conditions.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C8TC00558C

Reference64 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Synthesis of graphene-based nanosheets via chemical reduction of exfoliated graphite oxide