Why do Si quantum dots with stronger fast emission have lower external photoluminescence quantum yield?-Reference-Cited by-同舟云学术

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Why do Si quantum dots with stronger fast emission have lower external photoluminescence quantum yield?

Published:2024 Issue:10 Volume:6 Page:2644-2655
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Popelář Tomáš¹^ORCID,Matějka Filip¹²^ORCID,Kopenec Jakub¹^ORCID,Morselli Giacomo³^ORCID,Ceroni Paola³^ORCID,Kůsová Kateřina¹^ORCID

Affiliation:

1. Institute of Physics of the CAS, v.v.i., Cukrovarnická 10, 162 00 Prague 6, Czechia

2. University of Chemistry and Technology, Technická 5, 166 28 Praha 6, Czechia

3. Chemistry Department “Giacomo Ciamician”, University of Bologna, Via F. Selmi 2, 40126 Bologna, Italy

Abstract

We explain the observed correlation of increased fast emission of quantum dots with lower photoluminescence quantum yield as selective lifetime-based quenching, or in other words, preferential switching off of quantum dots with slow emission.

Funder

Grantová Agentura České Republiky

Università di Bologna

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NA/D3NA01031G

Reference54 articles.

1. Prospects of Nanoscience with Nanocrystals

2. Long-lived luminescence of silicon nanocrystals: from principles to applications

3. “Turning the dials”: controlling synthesis, structure, composition, and surface chemistry to tailor silicon nanoparticle properties

4. Silicon quantum dots: surface matter, what next?

5. Recent Updates on Functionalized Silicon Quantum-Dot-Based Nanoagents for Biomedical Applications

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