Exploring and controlling intrinsic defect formation in SnO2 thin films-Reference-Cited by-同舟云学术

Exploring and controlling intrinsic defect formation in SnO2 thin films

Published:2016 Issue:4 Volume:4 Page:758-765
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Porte Yoann¹²³⁴,Maller Robert¹²³⁴,Faber Hendrik⁵²⁶⁴,AlShareef Husam N.⁷⁸⁹¹⁰,Anthopoulos Thomas D.⁵²⁶⁴,McLachlan Martyn A.¹²³⁴

Affiliation:

1. Department of Materials and Centre for Plastic Electronics

2. Imperial College London

3. London SW7 2AZ

4. UK

5. Department of Physics and Centre for Plastic Electronics

6. London SW7 2BP

7. Materials Science and Engineering

8. King Abdullah University of Science and Technology (KAUST)

9. Thuwal 23955-6900

10. Saudi Arabia

Abstract

By investigating the influence of key growth variables on the measured structural and electrical properties of SnO₂ prepared by pulsed laser deposition (PLD) we demonstrate fine control of intrinsic n-type defect formation.

Funder

Global Collaborative Research, King Abdullah University of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TC/C5TC03520A

Reference42 articles.

1. Tin oxide transparent thin-film transistors

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