Quasi-two-dimensional α-molybdenum oxide thin film prepared by magnetron sputtering for neuromorphic computing-Reference-Cited by-同舟云学术

Quasi-two-dimensional α-molybdenum oxide thin film prepared by magnetron sputtering for neuromorphic computing

Published:2022 Issue:28 Volume:12 Page:17706-17714
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Wu Zhenfa¹,Shi Peng¹,Xing Ruofei¹,Xing Yuzhi¹,Ge Yufeng¹,Wei Lin²,Wang Dong¹,Zhao Le³,Yan Shishen¹,Chen Yanxue¹^ORCID

Affiliation:

1. School of Physics, and State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China

2. School of Microelectronics, and State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China

3. School of Electronic and Information Engineering, Qilu University of Technology, Jinan, 250353, China

Abstract

An all-solid-state synaptic transistor with about 4 orders conductance modulation is fabricated based on the α-MoO3 thin film. A three-layer artificial neural network with high recognition accuracy was constructed based on this synaptic transistor.

Funder

National Natural Science Foundation of China

Higher Education Discipline Innovation Project

National Key Research and Development Program of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/RA/D2RA02652J

Reference45 articles.

1. Reproducible Ultrathin Ferroelectric Domain Switching for High‐Performance Neuromorphic Computing

2. Flexible Neuromorphic Electronics for Computing, Soft Robotics, and Neuroprosthetics

3. Neuromorphic electronic systems

4. Theory and Simulation in Neuroscience

5. Deep learning

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