Band gap narrowing of SnS2superstructures with improved hydrogen production

Author:

Li Guowei1234,Su Ren56789,Rao Jiancun10111213,Wu Jiquan1234,Rudolf Petra1234,Blake Graeme R.1234,de Groot Robert A.123414,Besenbacher Flemming5678,Palstra Thomas T. M.1234

Affiliation:

1. Zernike Institute for Advanced Materials

2. University of Groningen

3. 9747 AG Groningen

4. The Netherlands

5. Interdisciplinary Nanoscience Center

6. Aarhus University

7. DK-8000 Aarhus C

8. Denmark

9. Syncat@Beijing

10. School of Materials Science and Engineering

11. Harbin Institute of Technology

12. 150001 Harbin

13. PR China

14. Institute for Molecules and Materials

Abstract

By introducing atom vacancies, the band-gap of semiconductors can be optimized for better photocatalytic performance.

Funder

Carlsbergfondet

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

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