Ideal two-dimensional quantum spin Hall insulators MgA<sub>2</sub>Te<sub>4</sub> (A = Ga, In) with Rashba spin splitting and tunable properties-Reference-Cited by-同舟云学术

Ideal two-dimensional quantum spin Hall insulators MgA₂Te₄ (A = Ga, In) with Rashba spin splitting and tunable properties

Published:2024 Issue:5 Volume:26 Page:3815-3822
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Li Jiaqi¹²^ORCID,Cheng Xinlu³,Zhang Hong¹²^ORCID

Affiliation:

1. College of Physics, Sichuan University, Chengdu 610065, China

2. Key Laboratory of High Energy Density Physics and Technology (Ministry of Education), Sichuan University, Chengdu 610065, China

3. Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China

Abstract

The physical mechanism of manipulating the MgA2Te4 (A = Ga, In) family via a vertical electric field to satisfy the demand of topological quantum devices as two-dimensional quantum spin Hall insulators.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CP/D3CP04898E

Reference39 articles.

1. Colloquium: Topological insulators

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3. Large gap two-dimensional topological insulators with prominent Rashba effect in ethynyl functionalized Ⅲ-Bi Buckled-Honeycomb monolayers

4. Na-functionalized IrTe2 monolayer: Suppressed charge ordering and electric field tuned topological phase transition

5. The birth of topological insulators

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