Self-generation of a quasi p–n junction for high efficiency chemical-doping-free graphene/silicon solar cells using a transition metal oxide interlayer-Reference-Cited by-同舟云学术

Self-generation of a quasi p–n junction for high efficiency chemical-doping-free graphene/silicon solar cells using a transition metal oxide interlayer

Published:2016 Issue:27 Volume:4 Page:10558-10565
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Xu Dikai¹²³⁴^ORCID,Yu Xuegong¹²³⁴,Gao Dace¹²³⁴,Li Cheng¹²³⁴,Zhong Mengyao¹²³⁴,Zhu Haiyan¹²³⁴,Yuan Shuai¹²³⁴,Lin Zhan⁵⁶²⁷⁸,Yang Deren¹²³⁴

Affiliation:

1. State Key Lab of Silicon Materials and School of Materials Science and Engineering

2. Zhejiang University

3. Hangzhou 310027

4. P. R. China

5. Institute of Chemical Engineering

6. College of Chemical and Biological Engineering

7. Hangzhou

8. China

Abstract

High performance chemical-doping-free graphene/silicon solar cells with a self-generated quasi p–n junction are reported.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TA/C6TA02868C

Reference50 articles.

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