Space-charge accumulation and band bending at conductive P3HT/PDIF-CN2 interfaces investigated by scanning-Kelvin probe microscopy-Reference-Cited by-同舟云学术

Space-charge accumulation and band bending at conductive P3HT/PDIF-CN2 interfaces investigated by scanning-Kelvin probe microscopy

Published:2021 Issue:47 Volume:9 Page:17143-17151
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Chianese Federico¹²^ORCID,Fusco Sandra¹³,Barra Mario²^ORCID,Chiarella Fabio²,Carella Antonio³^ORCID,Cassinese Antonio¹²

Affiliation:

1. Physics Department, Università degli studi di Napoli Federico II, Piazzale Tecchio 80, 80126 Naples, Italy

2. CNR-SPIN, Division of Naples, Piazzale Tecchio 80, 80126 Naples, Italy

3. Department of Chemical Sciences, Università degli studi di Napoli Federico II, Complesso universitario di Monte S. Angelo, Via Cintia 21, 80126 Naples, Italy

Abstract

Charge transfer processes and space charge accumulation phenomena are fundamental topics concerning the technological applications of organic heterointerfaces.

Funder

Ministero dell’Istruzione, dell’Università e della Ricerca

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC04840F

Reference69 articles.

1. Organic Electronic Devices and Their Functional Interfaces

2. Recent progress in organic photovoltaics: device architecture and optical design

3. Efficiency of bulk-heterojunction organic solar cells

4. Balanced Ambipolar Charge Transport in Phenacene/Perylene Heterojunction-Based Organic Field-Effect Transistors

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3. Correction: Space-charge accumulation and band bending at conductive P3HT/PDIF-CN2 interfaces investigated by scanning-Kelvin probe microscopy;Journal of Materials Chemistry C;2021