Theoretical study of the influence of doped oxygen group elements on the properties of organic semiconductors-Reference-Cited by-同舟云学术

Theoretical study of the influence of doped oxygen group elements on the properties of organic semiconductors

Published:2021 Issue:11 Volume:3 Page:3100-3106
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Liu Anmin¹²³⁴^ORCID,Gao Mengfan¹²³⁴,Ma Yan¹²³⁴⁵,Ren Xuefeng⁶³⁷⁴^ORCID,Gao Liguo¹²³⁴^ORCID,Li Yanqiang¹²³⁴^ORCID,Ma Tingli⁸⁹¹⁰⁴¹¹^ORCID

Affiliation:

1. State Key Laboratory of Fine Chemicals

2. School of Chemical Engineering

3. Dalian University of Technology

4. China

5. School of Economics and Finance

6. School of Ocean Science and Technology

7. Panjin

8. Department of Materials Science and Engineering

9. China Jiliang University

10. Hangzhou

11. Graduate School of Life Science and Systems Engineering

Abstract

Doping oxygen group elements on the properties of organic semiconductor were studied by DFT; the doping of multi-element Te has high stability and mobility; provide guidance for preparing high-performance organic semiconductor materials.

Funder

National Natural Science Foundation of China

Shenyang National Laboratory for Materials Science

Fundamental Research Funds for the Central Universities

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NA/D0NA01026J

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