Near-infrared light-emitting devices from individual heavily Ga-doped ZnO microwires-Reference-Cited by-同舟云学术

Near-infrared light-emitting devices from individual heavily Ga-doped ZnO microwires

Published:2017 Issue:10 Volume:5 Page:2542-2551
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

He Gao-Hang¹²³⁴⁵,Jiang Ming-Ming¹²³⁴⁵^ORCID,Dong Lin⁶⁷⁸⁹,Zhang Zhen-Zhong¹²³⁴⁵,Li Bing-Hui¹²³⁴⁵,Shan Chong-Xin¹²³⁴⁵^ORCID,Shen De-Zhen¹²³⁴⁵

Affiliation:

1. State Key Laboratory of Luminescence and Applications

2. Changchun Institute of Optics

3. Fine Mechanics and Physics

4. Chinese Academy of Sciences

5. Changchun

6. School of Physics and Engineering

7. Zhengzhou University

8. Zhengzhou 450001

9. China

Abstract

Electrically driven near-infrared light-emission from individual heavily Ga-doped ZnO microwires has been achieved, which can be analogous to incandescent sources.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C6TC05568K

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