Polymer/oxide bilayer dielectric for hysteresis-minimized 1 V operating 2D TMD transistors-Reference-Cited by-同舟云学术

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Polymer/oxide bilayer dielectric for hysteresis-minimized 1 V operating 2D TMD transistors

Published:2018 Issue:6 Volume:8 Page:2837-2843
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Yoon Minho¹²³⁴^ORCID,Ko Kyeong Rok¹²³⁴,Min Sung-Wook¹²³⁴,Im Seongil¹²³⁴

Affiliation:

1. Institute of Physics and Applied Physics

2. Yonsei University

3. Seoul 120-749

4. Korea

Abstract

By inserting hydroxyl-group free organic dielectric between hydrophilic oxide dielectric and 2D TMD channel, highly stable 2D FETs are achieved. This concept was successfully extended to a practical device application such as stable 1 V operation of 2D MoTe₂ FET.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/RA/C7RA12641G

Reference37 articles.

1. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

2. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

3. Two-dimensional gas of massless Dirac fermions in graphene

4. Atomically ThinMoS2: A New Direct-Gap Semiconductor

5. Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe2

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