High-performance optoelectronic memory based on bilayer MoS2 grown by Au catalyst-Reference-Cited by-同舟云学术

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High-performance optoelectronic memory based on bilayer MoS2 grown by Au catalyst

Published:2020 Issue:8 Volume:8 Page:2664-2668
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Yang Fengyou¹²³⁴⁵^ORCID,Chen Shengyao¹²³⁴⁵,Feng Huimin¹²³⁴⁵,Wang Cong⁶⁷⁸⁹¹⁰^ORCID,Wang Xiaofeng¹²³⁴⁵,Wang Shu¹²³⁴⁵,Zhou Zhican¹²³⁴⁵,Li Bo¹²³⁴⁵,Ma Lijun¹²³⁴⁵,Yang Haiguang¹²³⁴⁵,Xie Yong¹¹¹²¹³¹⁴,Liu Qian¹²³⁴⁵^ORCID

Affiliation:

1. CAS Key Laboratory of Nanosystem and Hierarchical Fabrication

2. CAS Center for Excellence in Nanoscience

3. National Center for Nanoscience and Technology

4. Beijing 100190

5. P. R. China

6. Division of Physics and Applied Physics

7. School of Physical and Mathematical Sciences

8. Nanyang Technological University

9. Singapore 637371

10. Singapore

11. Department of Physics

12. Beihang University

13. Beijing 100083

14. China

Abstract

We develop a high-performance nonvolatile MoS₂-based optoelectronic memory device based on a MoS₂ bilayer grown by a Au catalyst.

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Chinese Academy of Sciences

Seventh Framework Programme

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/C9TC06996H

Reference24 articles.

1. Laser-Thinning of MoS2: On Demand Generation of a Single-Layer Semiconductor

2. Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2

3. MoS2 Field-Effect Transistor with Sub-10 nm Channel Length

4. Nonvolatile Memories Based on Graphene and Related 2D Materials

5. Energy Dissipation in Monolayer MoS2 Electronics

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1. Sensing–Storage–Computing Integrated Devices Based on Carbon Nanomaterials;Advanced Memory Technology;2023-10-09

2. Two-dimensional MoS2/diamond based heterojunctions for excellent optoelectronic devices: current situation and new perspectives;Rare Metals;2023-08-26

3. MoS₂-Based Optical Device as Artificial Synapse for Neuromorphic Computing;IEEE Transactions on Electron Devices;2023-03

4. Research progress of optoelectronic devices based on two-dimensional MoS2 materials;Rare Metals;2022-10-06

5. High hysteresis and distinctive optoelectronic memory effect for ambipolar thin-film transistors using a conjugated polymer having donor–acceptor heterojunction;Organic Electronics;2022-09

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