InSe:Ge-doped InSe van der Waals heterostructure to enhance photogenerated carrier separation for self-powered photoelectrochemical-type photodetectors-Reference-Cited by-同舟云学术

InSe:Ge-doped InSe van der Waals heterostructure to enhance photogenerated carrier separation for self-powered photoelectrochemical-type photodetectors

Published:2022 Issue:14 Volume:14 Page:5412-5424
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Liao Liping¹,Wu Bing¹,Kovalska Evgeniya¹^ORCID,Oliveira Filipa M.¹,Azadmanjiri Jalal¹,Mazánek Vlastimil¹,Valdman Lukáš¹,Spejchalová Lucie¹,Xu Cunyun²,Levinský Petr³^ORCID,Hejtmánek Jiří³^ORCID,Sofer Zdeněk¹^ORCID

Affiliation:

1. Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic

2. Institute for Clean Energy and Advanced Materials, School of Materials and Energy, Southwest University, Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energy, Chongqing 400715, P. R. China

3. FZU – Institute of Physics of the Czech Academy of Sciences, Cukrovarnická 10/112, 162 00 Prague 6, Czech Republic

Abstract

We report the PEC characterization of InSe/InSe(Ge) van der Waals heterostructure. As-prepared heterostructure can improve the photoresponse characteristics of the sole InSe case. The mechanism of enhanced PEC performance and charge transfer process was explored.

Funder

Grantová Agentura České Republiky

China Scholarship Council

Ministerstvo Školství, Mládeže a Tělovýchovy

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NR/D1NR07150E

Reference53 articles.

1. PbS quantum dot based hybrid-organic photodetectors for X-ray sensing