Recent advances of novel ultrathin two-dimensional silicon carbides from a theoretical perspective-Reference-Cited by-同舟云学术

Recent advances of novel ultrathin two-dimensional silicon carbides from a theoretical perspective

Published:2020 Issue:7 Volume:12 Page:4269-4282
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Zhou Liujiang¹²³⁴^ORCID,Dong Huilong⁵⁶⁷⁴^ORCID,Tretiak Sergei⁸⁹¹⁰¹¹¹²

Affiliation:

1. Institute of Fundamental and Frontier Sciences

2. University of Electronic Science and Technology of China

3. Chengdu 610054

4. P. R. China

5. School of Chemistry and Materials Engineering

6. Changshu Institute of Technology

7. Changshu

8. Theoretical Physics and Chemistry of Materials

9. Los Alamos National Laboratory

10. Los Alamos

11. USA

12. Skolkovo Institute of Science and Technology

Abstract

Compared to graphene with semimetallic features, two-dimensional (2D) silicon carbide (Si–C) materials constitute another highly promising family for opto-electronic applications owing to their intrinsic electronic gaps.

Funder

University of Electronic Science and Technology of China

National Natural Science Foundation of China

Los Alamos National Laboratory

Laboratory Directed Research and Development

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/C9NR08755A

Reference92 articles.

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