Tungsten dichalcogenide WS2xSe2−2x films via single source precursor low-pressure CVD and their (thermo-)electric properties-Reference-Cited by-同舟云学术

Tungsten dichalcogenide WS_2xSe_2−2x films via single source precursor low-pressure CVD and their (thermo-)electric properties

Published:2023 Issue:17 Volume:11 Page:9635-9645
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Sethi V.¹^ORCID,Runacres D.²,Greenacre V.²^ORCID,Shao Li²,Hector A. L.²^ORCID,Levason W.²^ORCID,de Groot C. H.¹,Reid G.²^ORCID,Huang R.¹^ORCID

Affiliation:

1. School of Electronics and Computer Science, University of Southampton, Southampton, SO17 1BJ, UK

2. School of Chemistry, University of Southampton, Southampton, SO17 1BJ, UK

Abstract

A series of novel single source precursors, [WECl4(E′nBu2)] (E = S or Se; E′ = S or Se), are developed in this work to deposit stoichiometric WS2xSe2−2x (0 ≤ x ≤ 1) binary and ternary thin films.

Funder

Engineering and Physical Sciences Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TA/D3TA00466J

Reference81 articles.

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