Graphite-based selectorless RRAM: improvable intrinsic nonlinearity for array applications-Reference-Cited by-同舟云学术

Graphite-based selectorless RRAM: improvable intrinsic nonlinearity for array applications

Published:2018 Issue:33 Volume:10 Page:15608-15614
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Chen Ying-Chen¹²³⁴⁵^ORCID,Hu Szu-Tung⁶³⁴⁵,Lin Chih-Yang⁷⁸⁹¹⁰,Fowler Burt¹²³⁴⁵,Huang Hui-Chun⁷⁸⁹¹⁰,Lin Chao-Cheng¹¹¹²¹³¹⁰,Kim Sungjun¹⁴¹⁵¹⁶¹⁷^ORCID,Chang Yao-Feng¹⁸¹⁹⁵^ORCID,Lee Jack C.¹²³⁴⁵

Affiliation:

1. Microelectronics Research Center

2. Department of Electrical and Computer Engineering

3. The University of Texas at Austin

4. Austin

5. USA

6. Material Science and Engineering Program

7. Department of Physics

8. National Sun Yat-Sen University

9. Kaohsiung

10. Taiwan

11. National Nano Device Laboratories

12. NARLabs

13. Hsinchu

14. School of Electronics Engineering

15. Chungbuk National University

16. Cheongju

17. Republic of Korea

18. Intel Corporation

19. Hillsboro

Abstract

Selectorless graphite-based resistive random-access memory (RRAM) has been demonstrated by utilizing the intrinsic nonlinear resistive switching (RS) characteristics, without an additional selector or transistor for low-power RRAM array application.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/NR/C8NR04766A

Reference31 articles.

1. Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer

2. Nanoionics-based resistive switching memories

3. Metal–Oxide RRAM

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