Voltage and partial pressure dependent defect chemistry in (La,Sr)FeO3−δ thin films investigated by chemical capacitance measurements-Reference-Cited by-同舟云学术

Voltage and partial pressure dependent defect chemistry in (La,Sr)FeO3−δ thin films investigated by chemical capacitance measurements

Published:2018 Issue:17 Volume:20 Page:12016-12026
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Schmid Alexander¹²³^ORCID,Rupp Ghislain M.¹²³,Fleig Jürgen¹²³

Affiliation:

1. Institute of Chemical Technologies and Analytics, Vienna University of Technology, Getreidemarkt 9

2. Vienna

3. Austria

Abstract

Chemical capacitance measurements are used to study the defect chemistry of La_0.6Sr_0.4FeO_3−δ thin films and their polarization (η) and p_O2 dependence. Important point defects are oxygen vacancies (), electrons (e′) and holes (h˙).

Funder

Austrian Science Fund

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CP/C7CP07845E

Reference43 articles.

1. High-temperature ion transport in La1?x Sr x FeO3??

2. Impedance spectroscopic study on well-defined (La,Sr)(Co,Fe)O3−δ model electrodes

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4. Determination of Oxygen Vacancy Concentration in a Thin Film of La[sub 0.6]Sr[sub 0.4]CoO[sub 3−δ] by an Electrochemical Method

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