One-step CVD fabrication and optoelectronic properties of SnS2/SnS vertical heterostructures-Reference-Cited by-同舟云学术

One-step CVD fabrication and optoelectronic properties of SnS2/SnS vertical heterostructures

Published:2018 Issue:8 Volume:5 Page:1828-1835
ISSN:2052-1553
Container-title:Inorganic Chemistry Frontiers
language:en
Short-container-title:Inorg. Chem. Front.

Author:

Li Mingling¹²³⁴^ORCID,Zhu Yunsong¹²³⁴,Li Taishen¹²³⁴,Lin Yue¹²³⁴^ORCID,Cai Hongbing¹²³⁴^ORCID,Li Sijia¹²³⁴,Ding Huaiyi¹²³⁴,Pan Nan¹²³⁴⁵,Wang Xiaoping¹²³⁴⁵

Affiliation:

1. Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics

2. University of Science and Technology of China

3. Hefei

4. P.R. China

5. Synergetic Innovation Center of Quantum Information & Quantum Physics

Abstract

A high-quality vertical SnS₂/SnS heterostructure with excellent photoresponse has been fabricated and demonstrated.

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Chinese Academy of Sciences

Natural Science Foundation of Anhui Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/QI/C8QI00251G

Reference51 articles.

1. Emerging Photoluminescence in Monolayer MoS2

2. High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

3. Extraordinary Room-Temperature Photoluminescence in Triangular WS2 Monolayers

4. Single-layer MoS2 transistors

5. Ultrathin 2D GeSe2 Rhombic Flakes with High Anisotropy Realized by Van der Waals Epitaxy

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