A 1T′-MoTe2/GaN van der Waals Schottky junction for self-powered UV imaging and optical communication

Author:

Gao Lenan1,Yang Bangbang1,Du Junli2,Zhang Cheng3,Ma Shihong1,Guo Zhaowei1,Wang Yu1,Wang Jian1,Li Xinjian1,Wu Di1ORCID,Lin Pei1ORCID

Affiliation:

1. Key Laboratory of Materials Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou 450001, China

2. State Grid Henan Electric Power Research Institute, Zhengzhou 450052, China

3. National Joint Engineering Research Center for Abrasion Control and Molding of Metal Materials, School of Materials Science and Engineering, Henan University of Science and Technology, Luoyang 471003, China

Abstract

A mixed-dimensional 1T′-MoTe2/GaN vdW Schottky photodiode with excellent weak-light detection capability is fabricated, which can sense 360 nm signals as low as 3 nW and the light emission from a lighter with a pronounced on/off ratio of ∼2.

Funder

National Joint Engineering Research Center for Abrasion Control and Molding of Metal Materials

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

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