Heteroepitaxial growth and interface band alignment in a large-mismatch CsPbI<sub>3</sub>/GaN heterojunction-Reference-Cited by-同舟云学术

Heteroepitaxial growth and interface band alignment in a large-mismatch CsPbI₃/GaN heterojunction

Published:2022 Issue:6 Volume:10 Page:1984-1990
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Liu Xueyin¹,Cao Dan¹,Yao Yizhou¹,Tang Pengtao²,Zhang Mingsong²,Chen Xiaoshuang³,Shu Haibo²^ORCID

Affiliation:

1. College of Science, China Jiliang University, 310018 Hangzhou, China

2. College of Optical and Electronic Technology, China Jiliang University, 310018 Hangzhou, China

3. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, 200083 Shanghai, China

Abstract

Heteroepitaxial growth of single-crystal CsPbI3 nanoplatelets on GaN substrate leads to the formation of a type-II CsPbI3/GaN heterojunction that significantly enhances the separation and extraction of free carriers inside CsPbI3.

Funder

Natural Science Foundation of Zhejiang Province

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D1TC05533J

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