Insights into the role of the interface defects density and the bandgap of the back surface field for efficient p-type silicon heterojunction solar cells-Reference-Cited by-同舟云学术

Insights into the role of the interface defects density and the bandgap of the back surface field for efficient p-type silicon heterojunction solar cells

Published:2017 Issue:43 Volume:7 Page:26776-26782
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Wang Fengyou¹²³⁴^ORCID,Gao Yanbo¹²³⁴,Pang Zhenyu¹²³⁴⁵,Yang Lili¹²³⁴,Yang Jinghai¹²³⁴

Affiliation:

1. Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education

2. Jilin Normal University

3. Siping 136000

4. China

5. Changchun Institute of Optics, Fine Mechanics and Physics

Abstract

Interface defects and the back surface field of p-type heterojunction solar cells are investigated for achieving high performance.

Funder

Program for New Century Excellent Talents in University

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/RA/C7RA04018K

Reference28 articles.

1. Nanotube-Silicon Heterojunction Solar Cells

2. Achieving High Efficiency Silicon-Carbon Nanotube Heterojunction Solar Cells by Acid Doping

3. Interdigitated back contact silicon heterojunction solar cell and the effect of front surface passivation

4. Low-temperature synthesis TiO x passivation layer for organic-silicon heterojunction solar cell with a high open-circuit voltage

5. Band alignment and enhancement of the interface properties for heterojunction solar cells by employing amorphous–nanocrystalline hierarchical emitter layers

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