A tunable floating-base bipolar transistor based on a 2D material homojunction realized using a solid ionic dielectric material-Reference-Cited by-同舟云学术

A tunable floating-base bipolar transistor based on a 2D material homojunction realized using a solid ionic dielectric material

Author:

Li Jingfeng¹²³⁴⁵,Chen Xiaoqing¹²³⁴⁵^ORCID,Xiao Yu⁶⁷⁸⁹¹⁰,Li Songyu¹²³⁴⁵,Zhang Guoqing¹¹³¹²⁵,Diao Xungang⁶⁷⁸⁹¹⁰,Yan Hui¹²³⁴⁵,Zhang Yongzhe¹²³⁴⁵^ORCID

Affiliation:

1. College of Materials Science and Engineering and Key Laboratory of Advanced Functional Materials

2. Education Ministry of China

3. Beijing University of Technology

4. Beijing

5. China

6. Key Laboratory of Micro-nano Measurement-Manipulation and Physics

7. Ministry of Education of China

8. Department of Physics

9. Beihang University

10. Beijing 100191

11. Institute of Microstructure and Property of Advanced Materials

12. Beijing 100124

Abstract

This design can avoid the interface problem in heterojunction floating-base transistors.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Beijing Municipality

Beijing Municipal Science and Technology Commission

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

Reference50 articles.

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