Electronic structure and interface contact of two-dimensional van der Waals boron phosphide/Ga<sub>2</sub>SSe heterostructures-Reference-Cited by-同舟云学术

Electronic structure and interface contact of two-dimensional van der Waals boron phosphide/Ga₂SSe heterostructures

Published:2022 Issue:30 Volume:12 Page:19115-19121
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Do Hoang-Thinh¹²,Vu Tuan V.³^ORCID,Lavrentyev A. A.⁴,Cuong Nguyen Q.⁵⁶^ORCID,Cuong Pham V.⁷,Tong Hien D.⁸

Affiliation:

1. Division of Computational Mechatronics, Institute for Computational Science, Ton Duc Thang University, Ho Chi Minh City, Vietnam

2. Faculty of Electrical and Electronics Engineering, Ton Duc Thang University, Ho Chi Minh City, Vietnam

3. Division of Computational Physics, Institute for Computational Science, Ton Duc Thang University, Ho Chi Minh City, Vietnam

4. Department of Electrical Engineering and Electronics, Don State Technical University, 1 Gagarin Square, 344010 Rostov-on-Don, Russian Federation

5. Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam

6. Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam

7. Faculty of Electrical Engineering Technology, Ha Noi University of Industry, Ha Noi 100000, Vietnam

8. Faculty of Engineering, Vietnamese-German University, Binh Duong, Vietnam

Abstract

In this work, we systematically examine the electronic features and contact types of van der Waals heterostructures (vdWHs) combining single-layer boron phosphide (BP) and Janus Ga2SSe using first-principles calculations.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/RA/D2RA02748H

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