Thermal boundary conductance enhancement using experimentally achievable nanostructured interfaces – analytical study combined with molecular dynamics simulation-Reference-Cited by-同舟云学术

Thermal boundary conductance enhancement using experimentally achievable nanostructured interfaces – analytical study combined with molecular dynamics simulation

Published:2016 Issue:25 Volume:18 Page:16794-16801
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Lee Eungkyu¹²³⁴,Zhang Teng¹²³⁴,Hu Ming⁵⁶⁷⁸⁹,Luo Tengfei¹²³⁴¹⁰

Affiliation:

1. Department of Aerospace and Mechanical Engineering

2. University of Notre Dame

3. Notre Dame

4. USA

5. Institute of Mineral Engineering

6. Division of Materials Science and Engineering

7. Faculty of Georesources and Materials Engineering

8. RWTH Aachen University

9. 52064 Aachen

10. Center for Sustainable Energy at Notre Dame

Abstract

An analytical study demonstrates that SiC/GaN interfaces with square-shape nanopillar arrays enhance thermal boundary conductance, extendable to any characteristic lengths.

Funder

National Science Foundation

Defense Advanced Research Projects Agency

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2016/CP/C6CP01927G

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5. Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices

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