Continuity of thin layers of an organic semiconductor induced by the modification of the gate insulator-Reference-Cited by-同舟云学术

Continuity of thin layers of an organic semiconductor induced by the modification of the gate insulator

Published:2022 Issue:41 Volume:10 Page:15541-15553
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Łuczak Adam¹,Waliszewski Witold¹,Jerczyński Krzysztof²^ORCID,Wypych-Puszkarz Aleksandra¹,Rogowski Jacek³,Pietrasik Joanna²^ORCID,Kozanecki Marcin¹,Ulański Jacek¹^ORCID,Matyjaszewski Krzysztof¹⁴^ORCID

Affiliation:

1. Department of Molecular Physics, Faculty of Chemistry, Lodz University of Technology, Zeromskiego 116, 90-924, Lodz, Poland

2. Institute of Polymer and Dye Technology, Faculty of Chemistry, Lodz University of Technology, Stefanowskiego 16, 90-537, Lodz, Poland

3. Institute of General and Ecological Chemistry, Technical University of Lodz, Zeromskiego 116, 90-924, Lodz, Poland

4. Department of Chemistry, Carnegie Mellon University, 5000 Forbes Avenue, Pittsburgh, PA, 15213, USA

Abstract

The change in the crystallization process of an organic semiconductor layer in the presence of a small amount of TiO2 nanoparticles from the Volmer–Weber mode to the Stranski–Krastanov mode is reported and explained.

Funder

Narodowe Centrum Nauki

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D2TC02192G

Reference26 articles.

1. High-k Organic, Inorganic, and Hybrid Dielectrics for Low-Voltage Organic Field-Effect Transistors

2. Surface-grafting polymers: from chemistry to organic electronics

3. Self-Assembly of Pentacene on Sub-nm Scale Surface Roughness-Controlled Gate Dielectrics

4. Review of Polymer‐Based Nanodielectric Exploration and Film Scale‐Up for Advanced Capacitors

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