Lead-free, air-stable hybrid organic–inorganic perovskite resistive switching memory with ultrafast switching and multilevel data storage
Author:
Affiliation:
1. Department of Materials Science and Engineering
2. Pohang University of Science and Technology (POSTECH)
3. Korea
4. Department of Materials Science & Engineering
5. The University of Texas at Dallas
Abstract
The resistive switching memory based on a lead-free bismuth halide perovskite exhibits fast switching, multilevel data storage, and long-term air stability.
Funder
National Research Foundation of Korea
Ministry of Trade, Industry & Energy
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2018/NR/C8NR00863A
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