Physical and chemical aspects at the interface and in the bulk of CuInSe2-based thin-film photovoltaics-Reference-Cited by-同舟云学术

Physical and chemical aspects at the interface and in the bulk of CuInSe2-based thin-film photovoltaics

Published:2022 Issue:3 Volume:24 Page:1262-1285
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Ishizuka Shogo¹^ORCID,Nishinaga Jiro¹,Beppu Kosuke²^ORCID,Maeda Tsuyoshi²,Aoyagi Fuuka²,Wada Takahiro²,Yamada Akira³^ORCID,Chantana Jakapan⁴^ORCID,Nishimura Takahito⁴,Minemoto Takashi⁴,Islam Muhammad Monirul⁵,Sakurai Takeaki⁵^ORCID,Terada Norio⁶

Affiliation:

1. National Institute of Advanced Industrial Science and Technology, Umezono, Tsukuba, Ibaraki, Japan

2. Ryukoku University, Seta, Otsu, Shiga, Japan

3. Tokyo Institute of Technology, Ookayama, Meguro-ku, Tokyo, Japan

4. Ritsumeikan University, Noji-higashi, Kusatsu, Shiga, Japan

5. University of Tsukuba, Tennodai, Tsukuba, Ibaraki, Japan

6. Kagoshima University, Korimoto, Kagoshima, Japan

Abstract

Technical issues which remain in CuInSe2-based solar cells are reviewed. A study of single-crystalline Cu(In,Ga)Se2 film devices, carrier recombination analysis, and effects of alkali-metal doping and silver-alloying are particularly focused on.

Funder

Mitsubishi Foundation

New Energy and Industrial Technology Development Organization

Japan Society for the Promotion of Science

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CP/D1CP04495H

Reference132 articles.

1. CuInSe2/CdS heterojunction photovoltaic detectors