Efficient tuning of the conversion from ISC to high-level RISC via adjusting the triplet energies of charge-transporting layers in rubrene-doped OLEDs-Reference-Cited by-同舟云学术

Efficient tuning of the conversion from ISC to high-level RISC via adjusting the triplet energies of charge-transporting layers in rubrene-doped OLEDs

Published:2021 Issue:8 Volume:9 Page:2775-2783
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Tang Xiantong¹²³⁴⁵,Zhao Xi¹²³⁴⁵,Zhu Hongqiang⁶⁷⁸⁵^ORCID,Tu Linyao¹²³⁴⁵,Ma Caihong¹²³⁴⁵,Wang Ying¹²³⁴⁵,Ye Shengnan¹²³⁴⁵,Xiong Zuhong¹²³⁴⁵^ORCID

Affiliation:

1. School of Physical Science and Technology

2. MOE Key Laboratory on Luminescence and Real-Time Analysis

3. Southwest University

4. Chongqing 400715

5. China

6. Chongqing Key Laboratory of Photo-Electric Functional Materials

7. Chongqing Normal University

8. Chongqing 401331

Abstract

Charge-transporting layers with different triplet energies can efficiently tune the conversion from intersystem crossing to high-level reverse intersystem crossing processes in rubrene-doped OLEDs.

Funder

National Natural Science Foundation of China

Chongqing Graduate Student Research Innovation Project

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D0TC05898J

Reference45 articles.

1. Organic electroluminescent diodes

2. Recent Progress in High-Efficiency Blue-Light-Emitting Materials for Organic Light-Emitting Diodes