Augmented photoelectrochemical water reduction: influence of copper vacancies and hole-transport layer on CuBi<sub>2</sub>O<sub>4</sub> photocathode-Reference-Cited by-同舟云学术

Augmented photoelectrochemical water reduction: influence of copper vacancies and hole-transport layer on CuBi₂O₄ photocathode

Published:2022 Issue:12 Volume:10 Page:6623-6635
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Gopannagari Madhusudana¹,Reddy D. Amaranatha²,Hong Da Hye¹,Joshi Reddy K. Arun¹,Kumar D. Praveen¹,Ahn Hyun S.¹^ORCID,Kim Tae Kyu¹^ORCID

Affiliation:

1. Department of Chemistry, Yonsei University, Seoul 03722, Republic of Korea

2. Department of Science, Indian Institute of Information Technology Design and Manufacturing, Kurnool, Andhra Pradesh 518007, India

Abstract

Introducing Fe-doped NiOX as hole-transport layer beneath the copper vacancies induced CuBi2O4 photocathode facilitates efficient charge separation and transfer leading to remarkably enhanced photoelectrochemical performance.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TA/D1TA09956F

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5. Semiconducting materials for photoelectrochemical energy conversion

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